The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon
Author:
Affiliation:
1. Université Grenoble AlpesF‐38000 GrenobleFrance
2. CEA, LETI, MINATEC CampusF‐38054 GrenobleFrance
Funder
Research and Development
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201700406
Reference16 articles.
1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2. Studies on the Influences ofi-GaN,n-GaN,p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
3. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
4. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation
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