Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN
Author:
Affiliation:
1. Fraunhofer IAFFraunhofer Institute for Applied Solid State Physics Tullastrasse 72 Freiburg 79108 Germany
2. INATECH—Albert-Ludwigs Universität Freiburg Emmy-Noether-Str. 2 Freiburg 79108 Germany
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900436
Reference21 articles.
1. AlGaN/GaN current aperture vertical electron transistors with regrown channels
2. CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
3. Maskless regrowth of GaN for trenched devices by MOCVD
4. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
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