AlGaN/GaN current aperture vertical electron transistors with regrown channels
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1641520
Reference9 articles.
1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
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4. Kilovolt AlGaN/GaN HEMTs as Switching Devices
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