HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth-Reference-Cited by-同舟云学术

HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth

Published:2022-10 Issue:10 Volume:43 Page:1693-1696
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Jingyang¹^ORCID,Huang Wei²,Su Zhihao¹,Liang Zhiwen³,Wang Qi³^ORCID,Lun Au Yeng Wai⁴,Zhang D.W.²,Liu Zhaojun¹^ORCID

Affiliation:

1. Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China

2. State Key Laboratory of ASIC and System, School of Microelectronics, Shanghai Institute of Intelligent Electronics and Systems, Fudan University, Shanghai, China

3. Dongguan Institute of Opto-Electronics, Peking University, Dongguan, China

4. M-MOS Semiconductor Hong Kong Ltd., Hong Kong, China

Funder

Southern University of Science and Technology, Fudan University

Dongguan Institute of Opto-Electronics, Peking University

M-MOS Semiconductor Hong Kong Ltd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09861607.pdf?arnumber=9861607

Reference22 articles.

1. Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD

2. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

3. Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN

4. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

5. Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

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1. P‐66: Simulation and Optimization of In‐Situ Integration Ultraviolet HEMT‐LED Enabled by P‐GaN Selective Epitaxy Growth;SID Symposium Digest of Technical Papers;2023-06

2. P‐10.2: Design and Simulation of Integrated Ultraviolet HEMT‐LED enabled by P‐GaN Selective Epitaxy Growth;SID Symposium Digest of Technical Papers;2023-04

3. High-Breakdown P-Channel GaN MOS-HFETs With Al₂O₃-Dielectric and Drain Field-Plate;IEEE Journal of the Electron Devices Society;2023