P‐10.2: Design and Simulation of Integrated Ultraviolet HEMT‐LED enabled by P‐GaN Selective Epitaxy Growth

Abstract

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods.