Source of instability at the amorphous interface between InGaZnO4 and SiO2: A theoretical investigation-Reference-Cited by-同舟云学术

Source of instability at the amorphous interface between InGaZnO4 and SiO2: A theoretical investigation

Author:

Song Hochul¹,Kang Youngho¹,Nahm Ho-Hyun²³,Han Seungwu¹

Affiliation:

1. Department of Materials Science and Engineering and Research Institute of Advanced Materials; Seoul National University; Seoul 143-747 Korea

2. Center for Correlated Electron Systems; Institute for Basic Science (IBS); Seoul 151-747 Korea

3. Department of Physics and Astronomy; Seoul National University; Seoul 151-747 Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT & Future Planning

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference36 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra low leakage planer back gate transistor realized by 12 inch RF PVD InGaZnO₄ channel;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20