Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method
Author:
Affiliation:
1. Physics Department; University of Alabama at Birmingham; 1300 University Blvd Birmingham AL 35294 USA
2. Institute of High Pressure Physics; Sokolowska 29/37; 01-142 Warsaw Poland
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451567/fullpdf
Reference17 articles.
1. Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration
2. GaN Substrates—Progress, Status, and Prospects
3. GaN doped with beryllium—An effective light converter for white light emitting diodes
4. Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
5. Optical and magnetic resonance studies of Be-doped GaN bulk crystals
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3. Photo-EPR study of compensated defects in Be-doped GaN substrates;Journal of Applied Physics;2019-02-21
4. Extremely Slow Decay of Yellow Luminescence in Be-Doped GaN and Its Identification;physica status solidi (b);2018-08-13
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