Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration-Reference-Cited by-同舟云学术

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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Published:2012-07 Issue:1 Volume:350 Page:50-55
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Grzegory I.,Boćkowski M.,łucznik B.,Weyher J.,Litwin-Staszewska E.,Konczewicz L.,Sadovyi B.,Nowakowski P.,Porowski S.

Funder

European Union within European Regional Development Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. M. Boćkowski, et al., in this issue.

2. Dislocation reduction in GaN crystal by advanced-DEEP

3. Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

4. Properties of VPE‐grown GaN doped with Al and some iron‐group metals

5. Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

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1. Negative Magnetoresistivity in Highly Doped n-Type GaN;Materials;2022-10-11

2. Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds;Japanese Journal of Applied Physics;2019-05-17

3. Gallium Nitride, Bulk☆;Reference Module in Materials Science and Materials Engineering;2017

4. Structural properties of bulk GaN substrates: Impact of structural anisotropy on non-polar and semi-polar crystals;Crystal Research and Technology;2015-07-01

5. Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method;physica status solidi (c);2015-03-18

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