Structural properties of bulk GaN substrates: Impact of structural anisotropy on non-polar and semi-polar crystals-Reference-Cited by-同舟云学术

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Structural properties of bulk GaN substrates: Impact of structural anisotropy on non-polar and semi-polar crystals

Published:2015-07-01 Issue:11 Volume:50 Page:903-908
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Serafińczuk Jarosław¹,Kucharski Robert²,Zając Marcin²,Gotszalk Teodor Paweł¹,Kudrawiec Robert³

Affiliation:

1. Faculty of Microsystem Electronics and Photonics; Wroclaw University of Technology; Janiszewskiego 11/17 50-372 Wroclaw Poland

2. Ammono SA; Prusa 3 00-493 Warsaw Poland

3. Faculty of Fundamental Problems of Technology; Wroclaw University of Technology; Wybrzeze Wyspianskiego 27 50-370 Wroclaw Poland

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201500125/fullpdf

Reference32 articles.

1. Excellent crystallinity of truly bulk ammonothermal GaN

2. Bulk ammonothermal GaN

3. Recent achievements in AMMONO-bulk method

4. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

5. Ammonothermal growth of bulk GaN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate;Semiconductor Science and Technology;2018-08-07

2. Structural and strain anisotropies of N-polar GaN epilayers on offcut sapphire substrates;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09

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