Localization effects and band gap of GaAsBi alloys-Reference-Cited by-同舟云学术

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Localization effects and band gap of GaAsBi alloys

Published:2014-05-06 Issue:6 Volume:251 Page:1276-1281
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Mohmad A. R.¹²,Bastiman F.¹,Hunter C. J.¹,Richards R. D.¹,Sweeney S. J.³,Ng J. S.¹,David J. P. R.¹,Majlis B. Y.²

Affiliation:

1. Department of Electronic and Electrical Engineering; University of Sheffield; Sheffield S1 3JD United Kingdom

2. Institute of Microengineering and Nanoelectronics; Universiti Kebangsaan Malaysia; 43600 Bangi Selangor Malaysia

3. Advanced Technology Institute and Department of Physics; University of Surrey; Guildford, Surrey GU2 7XH United Kingdom

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201350311/fullpdf

Reference36 articles.

1. Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-Pumping

2. Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

3. Electron Hall mobility in GaAsBi

4. Absorption Characteristics of ${\rm GaAs}_{1-x}{\rm Bi}_{x}/{\rm GaAs}$ Diodes in the Near-Infrared

5. Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors

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4. Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires;Scientific Reports;2023-08-08

5. Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode;Applied Physics A;2023-08

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