Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
Author:
Affiliation:
1. Université Côte d'Azur, CNRS-CRHEA; 06560 Valbonne France
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
2. Development of high-efficiency and high-power vertical light emitting diodes
3. High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology
4. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
5. Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
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1. Electrochemical etching of n-type GaN in different electrolytes;Journal of Alloys and Compounds;2024-05
2. Lattice‐Asymmetry‐Driven Selective Area Sublimation: A Promising Strategy for III‐Nitride Nanostructure Tailoring;physica status solidi (RRL) – Rapid Research Letters;2023-04-27
3. Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y;Nanotechnology;2023-03-28
4. Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence;Journal of Applied Physics;2022-07-21
5. Porous Nitride Light-Emitting Diodes;ACS Photonics;2022-03-09
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