Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method-Reference-Cited by-同舟云学术

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Author:

Tanaka Atsushi¹²^ORCID,Inotsume Syo³,Harada Shunta¹,Hanada Kenji⁴,Honda Yoshio¹,Ujihara Toru¹,Amano Hiroshi¹²⁵⁶

Affiliation:

1. Institute of Materials and Systems for SustainabilityNagoya University Furo-cho, Chikusa-ku Nagoya 464-8601 Japan

2. Center for GaN Characterization and AnalysisNational Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan

3. Department of Electrical Engineering and Computer ScienceNagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan

4. Aichi Synchrotron Radiation CenterAichi Science & Technology Foundation 250-3 Minamiyamaguchi-cho 489-0965 Seto Japan

5. Akasaki Research CenterNagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan

6. Venture Business LaboratoryNagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference22 articles.

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