Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution-Reference-Cited by-同舟云学术

Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution

Published:2014-07-24 Issue:11 Volume:251 Page:2321-2325
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Tischer Ingo¹,Frey Manuel¹,Hocker Matthias¹,Jerg Lisa¹,Madel Manfred¹,Neuschl Benjamin¹,Thonke Klaus¹,Leute Robert A.R.²,Scholz Ferdinand²,Groiss Heiko³,Müller Erich³,Gerthsen Dagmar³

Affiliation:

1. Institut für Quantenmaterie/Gruppe Halbleiterphysik; Universität Ulm; 89069 Ulm Germany

2. Institut für Optoelektronik; Universität Ulm; 89069 Ulm Germany

3. Laboratorium für Elektronenmikroskopie; Karlsruher Institut für Technologie (KIT); 76128 Karlsruhe Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451252/fullpdf

Reference20 articles.

1. B.-C. Lin K.-J. Chen H.-V. Han Y.-P. Lan C.-H. Chiu C.-C. Lin M.-H. Shih P.-T. Lee H.-C. Kuo 25 2062 2013

2. Growth and characterization of stacking fault reduced GaN $(1\,0\,\bar{1}\,3)$ on sapphire

3. Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

4. Unique optical properties of AlGaN alloys and related ultraviolet emitters

5. GaInN quantum wells grown on facets of selectively grown GaN stripes

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