Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334923
Reference40 articles.
1. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
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3. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
4. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
5. Optically pumped GaN/Al0.1Ga0.9N double‐heterostructure ultraviolet laser
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