Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer
Author:
Affiliation:
1. Nagoya University Nagoya 464-8603 Japan
2. National Institute of Advanced Industrial Science and Technology (AIST)AIST-NU GaN-OIL Nagoya 464-8601 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900527
Reference21 articles.
1. Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography
2. Leakage mechanisms in GaN-on-GaN vertical pn diodes
3. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
4. Scattering of electrons at threading dislocations in GaN
5. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
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4. Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates;Journal of Applied Physics;2021-06-14
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