Leakage mechanisms in GaN-on-GaN vertical pn diodes-Reference-Cited by-同舟云学术

Leakage mechanisms in GaN-on-GaN vertical pn diodes

Published:2018-06-04 Issue:23 Volume:112 Page:233501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rackauskas B.¹^ORCID,Dalcanale S.¹^ORCID,Uren M. J.¹^ORCID,Kachi T.²,Kuball M.¹

Affiliation:

1. Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom

2. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5033436

Reference27 articles.

1. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

2. D. Disney , H. Nie , A. Edwards , D. Bour , H. Shah , and I. C. Kizilyalli , in 2013 25th International Symposium on Power Semiconductor Devices IC's (IEEE, 2013), pp. 59–62.

3. 1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

4. Y. Zhang , H.Y. Wong , M. Sun , S. Joglekar , L. Yu , N. A. Braga , R. V. Mickevicius , and T. Palacios , in 2015 IEEE International Electron Devices Meeting (IEEE, 2015), p. 35.1.1–35.1.4.

5. 4-kV and 2.8-$\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

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