Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers-Reference-Cited by-同舟云学术

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Published:2020-11-02 Issue:24 Volume:217 Page:2000465
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Goto Ken¹^ORCID,Takekawa Nao¹,Nagashima Toru²,Yamamoto Reo²,Pozina Galia³,Dalmau Rafael⁴,Schlesser Raoul⁴,Collazo Ramón⁵,Monemar Bo³,Sitar Zlatko⁵,Boćkowski Michał⁶⁷,Kumagai Yoshinao¹⁷

Affiliation:

1. Department of Applied Chemistry Tokyo University of Agriculture and Technology Koganei Tokyo 184-8588 Japan

2. Tsukuba Research Laboratories Tokuyama Corporation Tsukuba Ibaraki 300-4247 Japan

3. Department of Physics, Chemistry and Biology (IFM) Linköping University SE 581-83 Linköping Sweden

4. HexaTech, Inc. Morrisville NC 27560 USA

5. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695-7919 USA

6. Institute of High Pressure Physics Polish Academy of Sciences Sokolowska 29/37 01-142 Warsaw Poland

7. Institute of Global Innovation Research Tokyo University of Agriculture and Technology Koganei Tokyo 184-8588 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000465

Reference27 articles.

1. The influence of point defects on the thermal conductivity of AlN crystals

2. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

3. Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

4. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

5. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

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1. Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion;Journal of Applied Physics;2024-07-11

2. Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging;Crystal Growth & Design;2023-01-26

3. Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy;Applied Physics Express;2022-10-21

4. Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers;physica status solidi (a);2022-02-03