The influence of point defects on the thermal conductivity of AlN crystals-Reference-Cited by-同舟云学术

The influence of point defects on the thermal conductivity of AlN crystals

Published:2018-05-14 Issue:18 Volume:123 Page:185107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rounds Robert¹,Sarkar Biplab¹^ORCID,Alden Dorian¹^ORCID,Guo Qiang¹,Klump Andrew¹,Hartmann Carsten²^ORCID,Nagashima Toru³,Kirste Ronny¹⁴,Franke Alexander¹,Bickermann Matthias²^ORCID,Kumagai Yoshinao⁵,Sitar Zlatko¹⁴,Collazo Ramón¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. Leibniz Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany

3. Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247, Japan

4. Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA

5. Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

Funder

National Science Foundation

U.S. Department of Energy

Army Research Office

Air Force Office of Scientific Research

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5028141

Reference62 articles.

1. Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

2. Optically pumped UV lasers grown on bulk AlN substrates

3. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

5. Advances in Bulk Crystal Growth of AlN and GaN

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