Affiliation:
1. School of EECS KTH Royal Institute of Technology P.O. Box Electrum 229 SE 164 40 Kista Sweden
2. Institute of Solid State Physics University of Latvia Kengaraga Street 8 LV‐1063 Riga Latvia
Abstract
A pn‐heterojunction is fabricated by depositing an n‐type β‐Ga2O3 film by pulsed laser deposition (PLD) on c‐cut Al2O3. P‐type cuprous oxide films, Cu2O, are then deposited by PLD, as well as by radio frequency (RF) magnetron sputtering. It is concluded that hole injection is prohibited by a 3.26 eV valence band barrier, as measured by X‐ray photo‐electron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Heterojunction diode structures are prepared on the front side and electrical measurements demonstrate a rectification ration of 8 orders of magnitude and an ideality factor close to 2, indicating interface recombination‐controlled forward current. The junction is also optically active and shows a very fast photo‐response to 275 nm UV light.
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1 articles.
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