Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level-Reference-Cited by-同舟云学术

Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level

Published:2020-09-10 Issue:21 Volume:217 Page:2000221
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tautz Markus¹²,Weimar Andreas¹,Graßl Christian¹,Welzel Martin¹,Díaz Díaz David²³⁴^ORCID

Affiliation:

1. OSRAM Opto Semiconductors GmbH Leibnizstr. 4 93053 Regensburg Germany

2. Institut für Organische Chemie Universität Regensburg Universitätsstr. 31 93053 Regensburg Germany

3. Departamento de Química Orgánica Universidad de La Laguna Avda. Astrofísico Francisco Sánchez 3 38206 La Laguna Tenerife Spain

4. Instituto de Bio-Orgánica Antonio González Universidad de La Laguna Avda. Astrofísico Francisco Sánchez 2 38206 La Laguna Tenerife Spain

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000221

Reference37 articles.

1. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)

2. Nature of the 2.8-eV photoluminescence band in Si-doped GaN

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. Novel metalorganic chemical vapor deposition system for GaN growth

5. Substrates for gallium nitride epitaxy

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