Affiliation:
1. Convergence Center for Advanced Nano Semiconductor Department of Nano-Semiconductor Engineering Tech University of Korea Siheung 429–793 Korea
2. Adamant Namiki Precision Jewel Co. Ltd. Adachi Tokyo 123-8511 Japan
Abstract
Herein, the growth of lateral‐structure p‐type diamond Schottky barrier diodes (SBDs) on a heteroepitaxial diamond substrate using a thin atomic‐layer‐deposited hafnium oxide () interfacial layer is demonstrated. The diamond SBD is grown using the microwave plasma chemical vapor deposition (MPCVD) with 1 kW microwave power at 2.45 GHz. Two kinds of samples are grown on heteroepitaxial diamond substrates under the same growth conditions for identical epi structures. And the 10 nm thickness of is used as an insulator for MIS SBD. The effects of the interlayer on the electrical properties of the SBDs are investigated using current–voltage (I–V curve) and capacitance–voltage (C–V curve) characteristics at room temperature. Compared with the metal–semiconductor (MS) SBD, the metal–insulator–semiconductor (MIS) SBD exhibited a lower reverse leakage current. The Schottky barrier height in the MIS SBD is almost 0.2 eV higher than in the MS SBD. The insertion of the interlayer reduces the inhomogeneous Schottky barrier height and enhances the barrier height because of the reduction in the interface state density.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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