Effect of Gas Flow Rate in PECVD of Amorphous Silicon Thin Films for Interface Passivation of Silicon Heterojunction Solar Cells-Reference-Cited by-同舟云学术

Effect of Gas Flow Rate in PECVD of Amorphous Silicon Thin Films for Interface Passivation of Silicon Heterojunction Solar Cells

Published:2022-05-23 Issue:16 Volume:219 Page:2200183
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Pandey Ashutosh¹^ORCID,Bhattacharya Shrestha¹,Panigrahi Jagannath¹,Mandal Sourav¹^ORCID,Komarala Vamsi Krishna¹^ORCID

Affiliation:

1. Department of Energy Science and Engineering Indian Institute of Technology Delhi New Delhi 110 016 India

Funder

Department of Electronics and Information Technology, Ministry of Communications and Information Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200183

Reference30 articles.

1. Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency

2. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

3. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

4. High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications

5. Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance

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