Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance-Reference-Cited by-同舟云学术

Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance

Published:2019-07 Issue:7 Volume:9 Page:075115
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Gotoh Kazuhiro¹^ORCID,Wilde Markus²,Kato Shinya³,Ogura Shohei²,Kurokawa Yasuyoshi¹,Fukutani Katsuyuki²,Usami Noritaka¹

Affiliation:

1. Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Aichi 464-8603, Japan

2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

3. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Gokisho-cho, Showa-ku, Nagoya 466-8555, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5100086

Reference46 articles.

1. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

2. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

3. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

4. Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization

5. Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

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