Unveiling the Role of Al 2 O 3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors-Reference-Cited by-同舟云学术

Unveiling the Role of Al 2 O 3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors

Published:2021-01-15 Issue:6 Volume:218 Page:2000621
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kim Tae Hyeon¹,Park Woojin¹²,Oh Seyoung¹²,Kim So-Young³⁴,Yamada Naohito⁵,Kobayashi Hikaru⁵,Jang Hye Yeon¹,Nam Jae Hyeon¹,Habazaki Hiroki⁵⁶,Lee Byoung Hun³⁴,Cho Byungjin¹²^ORCID

Affiliation:

1. Department of Advanced Material Engineering Chungbuk National University 1 Chungdae-ro, Seowon-gu Cheongju Chungbuk 28644 Republic of Korea

2. The Education and Research Center for Region-Customized Smart Energy and Resource Cycle Convergence Technology Chungbuk National University 1 Chungdae-ro, Seowon-gu Cheongju Chungbuk 28644 Republic of Korea

3. Center for Semiconductor Technology Convergence Pohang University of Science and Technology Cheongam-ro 77, Nam-gu Pohang Gyeongbuk 37673 Republic of Korea

4. Department of Electrical Engineering Pohang University of Science and Technology Cheongam-ro 77, Nam-gu Pohang 37673 Republic of Korea

5. Graduate School of Chemical Sciences and Engineering Hokkaido University Sapporo 060-8628 Japan

6. Faculty of Engineering Hokkaido University Sapporo Hokkaido 060-8628 Japan

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000621

Reference47 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

4. Solution processing of transparent conductors: from flask to film

5. Combinatorial study of zinc tin oxide thin-film transistors

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2. Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer;Advanced Electronic Materials;2022-11-10

3. Dual-Terminal Stimulated Heterosynaptic Plasticity of IGZO Memtransistor with Al₂O₃/TiO₂ Double-Oxide Structure;ACS Applied Electronic Materials;2022-06-08