Dual-Terminal Stimulated Heterosynaptic Plasticity of IGZO Memtransistor with Al2O3/TiO2 Double-Oxide Structure-Reference-Cited by-同舟云学术

Dual-Terminal Stimulated Heterosynaptic Plasticity of IGZO Memtransistor with Al₂O₃/TiO₂ Double-Oxide Structure

Published:2022-06-08 Issue:6 Volume:4 Page:2923-2932
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Park Heejeong¹²,Oh Seyoung¹²,Jeong Soo-Hong¹²,Kwon Ojun¹²,Seo Hyun Young¹²,Kwon Jung-Dae³,Kim Yonghun³^ORCID,Park Woojin¹²,Cho Byungjin¹²^ORCID

Affiliation:

1. Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea

2. Department of Urban, Energy, Environmental Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea

3. Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea

Funder

Korea Institute of Materials Science

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00393

Reference55 articles.

1. Neuromorphic computing using non-volatile memory

2. Neuromorphic electronic systems