Amorphous to Polycrystalline Phase Transition in La 2 O 3 Films Grown on a Silicon Substrate Forming Si‐Doped La 2 O 3 Films-Reference-Cited by-同舟云学术

Amorphous to Polycrystalline Phase Transition in La ₂ O ₃ Films Grown on a Silicon Substrate Forming Si‐Doped La ₂ O ₃ Films

Published:2022-10-07 Issue:23 Volume:219 Page:2200318
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Lee Seung Ran¹^ORCID,Kim Ansoon²³,Choi Seungwook²³,Ikeda Tokihiro⁴,Kobayashi Tomohiro⁵,Isoshima Takashi⁶,Cho Sungwan⁷,Kim Yousoo¹⁸

Affiliation:

1. Surface and Interface Science Laboratory RIKEN Cluster for Pioneering Research 2-1 Hirosawa Wako Saitama 351-0198 Japan

2. Interdisciplinery Materials Measurement Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

3. Department of Nano Science University of Science and Technology Daejeon 34113 Republic of Korea

4. Research Instruments Group RIKEN Nishina Center for Accelerator-Based Science 2-1 Hirosawa Wako Saitama 351-0198 Japan

5. Neutron Beam Technology Team RIKEN Center for Advanced Photonics 2-1 Hirosawa Wako Saitama 351-0198 Japan

6. Nano Medical Engineering Laboratory RIKEN Cluster for Pioneering Research 2-1 Hirosawa Wako Saitama 351-0198 Japan

7. Division of Physical Metrology Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

8. Department of Applied Chemistry The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan

Funder

Japan Society for the Promotion of Science

National Research Foundation of Korea

Korea Research Institute of Standards and Science

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200318

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3. O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

4. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

5. X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering

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