High‐Quality Bulk β‐Ga 2 O 3 and β‐(Al x Ga 1− x ) 2 O 3 Crystals: Growth and Properties-Reference-Cited by-同舟云学术

High‐Quality Bulk β‐Ga 2 O 3 and β‐(Al x Ga 1− x ) 2 O 3 Crystals: Growth and Properties

Published:2021-09-03 Issue:20 Volume:218 Page:2100335
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Bauman Dmitrii A.¹,Panov Dmitrii Iu.¹,Zakgeim Dmitrii A.¹,Spiridonov Vladislav A.¹,Kremleva Arina V.¹^ORCID,Petrenko Artem A.¹^ORCID,Brunkov Pavel N.²^ORCID,Prasolov Nikita D.²,Nashchekin Alexey V.²,Smirnov Andrei M.¹,Odnoblyudov Maxim A.¹,Bougrov Vladislav E.¹,Romanov Alexey E.¹^ORCID

Affiliation:

1. Institute of Advanced Data Transfer Systems ITMO University Kronverkskii pr. 49 St.-Petersburg 197101 Russia

2. Center for Physics of Nanoheterostructures Ioffe Institute 26 Politekhnicheskaya St.-Petersburg 194021 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100335

Reference27 articles.

1. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

2. Bulk β-Ga2O3 single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiation

3. A 800 V β‐Ga 2 O 3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm −2

4. Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

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