High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties-Reference-Cited by-同舟云学术

High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties

Published:2023-07-18 Issue:5 Volume:41 Page:
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:

Author:

Bauman Dmitrii A.¹^ORCID,Iu. Panov Dmitrii¹^ORCID,Spiridonov Vladislav A.¹^ORCID,Kremleva Arina V.¹^ORCID,Asach Aleksei V.¹^ORCID,Tambulatova Ekaterina V.¹^ORCID,Sakharov A. V.²^ORCID,Romanov Alexey E.¹²³^ORCID

Affiliation:

1. ITMO University 1 Institute of Advanced Data Transfer Systems, , St.-Petersburg 197101, Russia

2. Ioffe Institute 2 , St. Petersburg 194021, Russia

3. Togliatti State University 3 Engineering Center, , Togliatti 445020, Russia

Abstract

Bulk crystals of β-Ga2O3 were successfully grown by the edge-defined film-fed growth method. The crystalline quality of the obtained crystals was analyzed by the method of x-ray diffractometry. The full width at half maximum of the rocking curve was about 72 arcsec. The optical bandgap was determined by analyzing the optical transmission spectra and amounted to 4.7 eV. The hot disk method was used to obtain the thermal conductivity of the sample along the [001] direction in the temperature range from 30 to 120 °C. The maximum value of thermal conductivity obtained at 30 °C was 9.25 W/(m K).

Funder

Ministry of Science and Higher Education of the Russian Federation

Russian Science Foundation

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/6.0002644/18048937/053203_1_6.0002644.pdf

Reference30 articles.

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2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

3. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

4. On improving the radiation resistance of gallium oxide for space applications

5. Metalorganic chemical vapor deposition of (100) β-Ga₂O₃ on on-axis Ga₂O₃ substrates

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