Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric-Reference-Cited by-同舟云学术

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

Published:2012-03-10 Issue:6 Volume:41 Page:608-618
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Nirmal D¹,Vijayakumar P²,Shruti K¹,Mohankumar N³

Affiliation:

1. Department of Electronics and Communication Engineering; Karunya University; Coimbatore; Tamilnadu; India

2. Department of Electrical and Electronic Engineering; Karpagam College of Engineering; Coimbatore; Tamilnadu; India

3. Department of Electronics and Communication Engineering; Skp Engineering College; Thiruvanamalai; Tamilnadu; India

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cta.1800/fullpdf

Reference23 articles.

1. Nanosized High κ Dielectric Material for FINFET;Nirmal;Integrated Ferroelectrics,2010

2. Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics;Nirmal;Defence Science Journal,2011

3. High-k Dielectrics for Submicron MOSFET;Chowdhury;International Journal of Emerging Technologies in Sciences and Engineering,2010

4. Effective dielectric thickness Scaling for High-K Gate Dielectric MOSFETs;Bhuwalka;Materials Research Society Symposium Proceedings,2002

5. Analysis of Single Halo Double Gate MOSFETs using high-k dielectrics;Nirmal;3rd International Conference on Electronics Computer Technology Proceedings,2011

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comparative Analyze of FinFET and Bulk MOSFET SRAM Design;2022 International Conference on Applied Physics and Computing (ICAPC);2022-09

2. Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications;Journal of Physics: Conference Series;2021-06-01

3. Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials;Micro-Electronics and Telecommunication Engineering;2021

4. Performance Investigation of Dual-Halo Dual-Dielectric Triple Material Surrounding Gate MOSFET with High-κ dielectrics for Low Power Applications;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2020-06-30

5. Novel harmonic elimination strategy based on Multi-Objective Grey Wolf Optimizer to ameliorate voltage quality of odd-nary multi-level structure;Heliyon;2020-03