Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications

Abstract

Abstract High Electron Mobility Transistor (HEMT) is presently a very important part in the electronics industries for high frequency applications and for low power applications. In this approach, single gate enhancement mode composite channels of In0.7Ga0.3As/InAs/In0.7Ga0.3As HEMT devices are simulated and analyzed for low power operations which leads to strong DC and RF performance. This can be achieved by working on the composite channel which was lattice matched, gate which was recessed and length of the gate which was optimized. In this paper, for various lengths of the gate with constant barrier thickness, the performance of the device is analyzed symmetrically with the specialized device dimensions with thickness of the barrier (TB) = 2nm, thickness of the channel (TCH) = 15nm. The length of the gate can be reduced which supports in decreasing the drain resistance, effects of capacitance and improved average electron velocity in the gate. And this in turn results in the best performance of the device metrics with the values, trans-conductance (gm) as 1741 μS/μm, drain current (Id) as 0.553574 mA/μm, cut-off frequency (fT) as 431 GHz, maximum frequency of oscillations (fmax) as 557 GHz.