Nanosized High κ Dielectric Material for FINFET-Reference-Cited by-同舟云学术

Nanosized High κ Dielectric Material for FINFET

Published:2010-11-12 Issue:1 Volume:121 Page:31-35
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Nirmal D.¹,Nalini B.²,Vijayakumar P.³

Affiliation:

1. a Department of Electronics and Communication Engineering , Karunya University , Coimbatore

2. b Centre for Nanotechnology , Karunya University , Coimbatore

3. c Department of Electrical and Electronics , Karpagam College of Engineering , Coimbatore

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2010.492014

Reference7 articles.

1. Zeitzoff , Peter M. Hutchby , James A. Bersuker , Gennadi and Huff , Howard R. 2003.Integrated Circuit technologies: From Conventional CMOS to Nanoscale era: Nano and Giga Challenges in Microelectronics, Edited by: Greer , Jim , Korkin , Anatoli and Labanowski , Jan . 1–25. Elsevier. eds.

2. http://www.itrs.net/Links/2008ITRS/Home2008.htm

3. Reaction–diffusion in high-k dielectrics on Si

4. The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Analysis of 10-nm FD-SOI FinFET by Dual-Dielectric Spacers for High-Speed Switching;Lecture Notes in Electrical Engineering;2024

2. Design and Parametric Variation Assessment of Extended Source Double Gate Tunnel Field-Effect Transistor (ESDGTFET) for Enhanced Performance;Lecture Notes in Networks and Systems;2024

3. Design and Comparative Analysis of FD-SOI FinFET with Dual-dielectric Spacers for High Speed Switching Applications;Silicon;2023-11-25

4. Improved Switching and Analog/RF Behaviour of SiGe Heterojunction Dielectric Modulated Dual Material Nano Silicon Tunnel FET for Low Power Applications;Silicon;2023-11-14

5. Performance Investigation of Dual-Halo Dual-Dielectric Triple Material Surrounding Gate MOSFET with High-κ dielectrics for Low Power Applications;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2020-06-30