Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions-Reference-Cited by-同舟云学术

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Published:2019-09-18 Issue:12 Volume:5 Page:1900744
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Banerjee Writam¹^ORCID,Hwang Hyunsang¹

Affiliation:

1. Center for Single Atom‐based Semiconductor DeviceDepartment of Material Science and EngineeringPohang University of Science and Technology (POSTECH) Pohang 790784 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900744

Reference52 articles.

1. The future of electronics based on memristive systems

2. RRAM-based synapse devices for neuromorphic systems

3. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

4. Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

5. Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

Cited by 58 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of Low Power and Highly Uniform 6-bit Operation in SiO₂-Based Memristors Embedded With Pt Nanoparticles;IEEE Transactions on Electron Devices;2024-09

2. Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires;Nanoscale Horizons;2024

3. Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems;ACS Nano;2023-06-29

4. Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard;Advanced Quantum Technologies;2023-05-18

5. Exploring the Physical Properties Related to Resistive Switching Events in HfO₂-Based RRAM Devices with an Analytical Framework;ACS Applied Electronic Materials;2023-01-06