Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices-Reference-Cited by-同舟云学术

Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices

Published:2019-02-04 Issue:9 Volume:5 Page:1800629
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Gonzalez‐Rosillo Juan Carlos¹^ORCID,Ortega‐Hernandez Rafael¹²,Arndt Benedikt³^ORCID,Coll Mariona¹^ORCID,Dittmann Regina³^ORCID,Obradors Xavier¹^ORCID,Palau Anna¹^ORCID,Suñe Jordi²,Puig Teresa¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB‐CSIC) Campus de Bellaterra 08193 Bellaterra Barcelona Spain

2. Departament d'Enginyeria ElectrònicaUniversitat Autònoma de Barcelona 08193 Bellaterra Barcelona Spain

3. Peter Grünberg Institute 7Research Center Jülich Wilhelm‐Johnen‐Straße Jülich 52425 Germany

Funder

European Cooperation in Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800629

Reference47 articles.

1. The missing memristor found

2. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

3. Emerging memories: resistive switching mechanisms and current status

4. Memory effects in complex materials and nanoscale systems

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