La 2 NiO 4+δ ‐Based Memristive Devices Integrated on Si‐Based Substrates
Author:
Affiliation:
1. University Grenoble Alpes CNRS Grenoble INP LMGP Grenoble 38000 France
2. University Grenoble Alpes CNRS CEA/LETI Minatec LTM Grenoble 38000 France
3. University Grenoble Alpes CEA LETI Grenoble 38000 France
Funder
Agence Nationale de la Recherche
Publisher
Wiley
Subject
Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202200329
Reference42 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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5. Memory devices and applications for in-memory computing
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1. Analog memristive devices based on La2NiO4+ δ as synapses for spiking neural networks;Journal of Physics D: Applied Physics;2023-12-08
2. Epitaxial La0.5Sr0.5MnO3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States;Advanced Materials Interfaces;2023-04-18
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