P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating-Reference-Cited by-同舟云学术

P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating

Published:2018-09-27 Issue:1 Volume:5 Page:1800538
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Guan Xinwei¹,Wang Zhenwei¹,Hota Mrinal K.¹,Alshareef Husam N.¹^ORCID,Wu Tom¹²^ORCID

Affiliation:

1. Materials Science and Engineering; Physical Sciences and Engineering Division; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

2. School of Materials Science and Engineering; University of New South Wales (UNSW); Sydney NSW 2052 Australia

Funder

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800538/fullpdf

Reference31 articles.

1. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

2. Ambipolar Oxide Thin-Film Transistor

3. Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

4. Bipolar Conduction in SnO Thin Films

5. p-channel thin-film transistor using p-type oxide semiconductor, SnO

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