Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr 3 Film‐Based Memory Device
Author:
Affiliation:
1. School of Physics and Technology, and the Key Laboratory of Artificial Micro/Nano structures of Ministry of EducationWuhan University Wuhan 430072 China
2. Department of PhysicsShaanxi University of Science and Technology Xi'an 710021 China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shaanxi Province
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900754
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5. Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory
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