Coherent Epitaxy of a Ferroelectric Heterostructure on a Trilayered Buffer for Integration into Silicon
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST); Higashi 1-1-1 Tsukuba, Ibaraki 305-8565 Japan
2. JST, PRESTO; Kawaguchi, Saitama 332-0012 Japan
Funder
JSPS KAKENHI
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201500334/fullpdf
Reference22 articles.
1. Ferroelectric thin films: Review of materials, properties, and applications
2. Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
3. Carrier density modulation in a germanium heterostructure by ferroelectric switching
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5. Giant tunnel electroresistance for non-destructive readout of ferroelectric states
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