Carrier density modulation in a germanium heterostructure by ferroelectric switching-Reference-Cited by-同舟云学术

Carrier density modulation in a germanium heterostructure by ferroelectric switching

Published:2015-01-14 Issue:1 Volume:6 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Ponath Patrick,Fredrickson Kurt,Posadas Agham B.,Ren Yuan,Wu Xiaoyu,Vasudevan Rama K.,Baris Okatan M.,Jesse S.,Aoki Toshihiro,McCartney Martha R.,Smith David J.,Kalinin Sergei V.,Lai Keji,Demkov Alexander A.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms7067.pdf

Reference47 articles.

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4. Niu, F. & Wessels, B. W. J. Epitaxial growth and strain relaxation of BaTiO3 thin films on SrTiO3 buffered (001) Si by molecular beam epitaxy. Vac. Sci. Technol. B 25, 1053–1057 (2007).

5. Vaithyanathan, V. et al. c-axis oriented epitaxial BaTiO3 films on (001) Si. J. Appl. Phys. 100, 024108–024109 (2006).

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