Reduction of Parasitic Capacitance in Indium-Gallium-Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe-Patterned Source/Drain Electrodes-Reference-Cited by-同舟云学术

Reduction of Parasitic Capacitance in Indium-Gallium-Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe-Patterned Source/Drain Electrodes

Published:2018-03-12 Issue:4 Volume:4 Page:1700550
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lee Suhui¹,Chen Yuanfeng¹,Jeon Jaekwon¹,Park Chanju¹,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center (ADRC); Department of Information Display; Kyung Hee University; 26, Kyungheedae-ro Dongdaemun-gu Seoul 02447 Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors

4. Self-Powered Nanosensors and Nanosystems

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering;IEEE Electron Device Letters;2024-04

2. Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability;Advanced Materials Technologies;2024-02-10

3. Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors;Materials;2023-11-15

4. Biaxially Stretchable Active‐Matrix Micro‐LED Display with Liquid Metal Interconnects;Advanced Materials Technologies;2023-10-03

5. 3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories;Advanced Electronic Materials;2023-06-23