Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering-Reference-Cited by-同舟云学术

Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

Published:2024-04 Issue:4 Volume:45 Page:593-596
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhou Kuan-Ju¹^ORCID,Chang Ting-Chang²^ORCID,Yen Po-Yu¹^ORCID,Chen Yu-An¹,Chien Ya-Ting³,Huang Bo-Shen⁴^ORCID,Lee Po-Yi¹,Juan Tzu-Hsuan¹,Sze Simon M.⁵,Fan Yang-Shun⁴,Huang Chen-Shuo⁴,Tsai Chih-Hung⁴

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Physics and the College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Advanced Process Research Division, AUO Corporation, Hsinchu, Taiwan

5. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Research Institute

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10431683.pdf?arnumber=10431683

Reference25 articles.

1. Oxide-TFT technologies for next-generation AMOLED displays

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Effect of Mechanical Strain on Hydrogenated Amorphous Silicon Thin-Film Transistors and Compensation Circuits on Flexible Substrates

4. Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays

5. Present status of amorphous In–Ga–Zn–O thin-film transistors