Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors-Reference-Cited by-同舟云学术

Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors

Author:

Kang Youngho¹,Ahn Byung Du²,Song Ji Hun³,Mo Yeon Gon²,Nahm Ho-Hyun⁴⁵,Han Seungwu¹,Jeong Jae Kyeong³

Affiliation:

1. Department of Materials Science and Engineering and Research Institute of Advanced Materials; Seoul National University; Seoul 151-742 South Korea

2. Research and Development Center; Samsung Display; Yongin 446-711 South Korea

3. Department of Materials Science and Engineering; Inha University; Incheon 402-751 South Korea

4. Center for Correlated Electron Systems; Institute for Basic Science (IBS); Seoul 151-747 South Korea

5. Department of Physics and Astronomy; Seoul National University; Seoul 151-747 South Korea

Funder

MKE/KEIT

Institute for Basic Science (IBS) in Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference59 articles.

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