Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions-Reference-Cited by-同舟云学术

Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions

Published:2019-11-18 Issue:1 Volume:6 Page:1900808
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Andrä Michael¹,Funck Carsten²,Raab Nicolas¹,Rose Marc‐André²,Vorokhta Mykhailo³,Dvorˇák Filip³,Šmíd Brˇetislav³,Matolín Vladimír³,Mueller David N.⁴,Dittmann Regina¹,Waser Rainer¹²,Menzel Stephan¹,Gunkel Felix¹²^ORCID

Affiliation:

1. Peter Grünberg Institute 7 Forschungszentrum Juelich GmbH, and Juelich‐Aachen Research Alliance for Fundamentals on Future Information Technology (JARA‐FIT) 52425 Juelich Germany

2. Institute of Electronic Materials (IWE2) RWTH Aachen University and JARA‐FIT 52074 Aachen Germany

3. Department of Surface and Plasma Science Faculty of Mathematics and Physics Charles University V Holesovickach 2 180 00 Prague Czech Republic

4. Peter Grünberg Institute 6 Forschungszentrum Juelich GmbH, and Juelich‐Aachen Research Alliance for Fundamentals on Future Information Technology (JARA‐FIT) 52425 Juelich Germany

Funder

Grantová Agentura České Republiky

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900808

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