Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering

Published:2019-07-02 Issue:8 Volume:5 Page:1800835
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shahrabi Elmira¹^ORCID,Giovinazzo Cecilia²,Hadad Mahmoud³,LaGrange Thomas⁴,Ramos Miguel¹,Ricciardi Carlo²,Leblebici Yusuf¹

Affiliation:

1. Microelectronic Systems Laboratory (LSM)Swiss Federal Institute of Technology (EPFL) Lausanne CH‐1015 Switzerland

2. Department of Applied Science and Technology (DISAT)Politecnico di Torino Turin 10129 Italy

3. Electroceramic Thin Films GroupSwiss Federal Institute of Technology (EPFL) Lausanne CH‐1015 Switzerland

4. Interdisciplinary Center for Electron MicroscopySwiss Federal Institute of Technology (EPFL) Lausanne CH‐1015 Switzerland

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800835

Reference61 articles.

1. Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

2. Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory

3. Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM Memory Cells

4. Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes

5. HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides;Applied Surface Science;2025-01

2. Performance improvement of bilayer memristor based on hafnium oxide by Ti/W synergy and its synaptic behavior;Vacuum;2024-09

3. Ag-doped non–imperfection-enabled uniform memristive neuromorphic device based on van der Waals indium phosphorus sulfide;Science Advances;2024-03-15

4. A carbon conductive filament-induced robust resistance switching behavior for brain-inspired computing;Materials Horizons;2024

5. PWM-to-message signal decoder circuit system based on opto-electronic devices and their PPC characteristics;Journal of the Korean Physical Society;2023-11-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3