Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.-Reference-Cited by-同舟云学术

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

Published:2014-03-21 Issue:7 Volume:6 Page:5056-5060
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Calka Pauline¹,Sowinska Malgorzata¹,Bertaud Thomas¹,Walczyk Damian¹,Dabrowski Jarek¹,Zaumseil Peter¹,Walczyk Christian¹,Gloskovskii Andrei²,Cartoixà Xavier³,Suñé Jordi³,Schroeder Thomas¹⁴

Affiliation:

1. IHP, Im Technologiepark 25, 15236 Frankfurt an der Oder, Germany

2. Deutsches Elektronen-Synchrotron (DESY), 22607 Hamburg, Germany

3. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

4. Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany

Funder

Alexander von Humboldt Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am500137y

Reference25 articles.

1. Embedded Memories for Nano-Scale VLSIs

2. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

3. Resistance switching in HfO2 metal-insulator-metal devices

4. Prediction of Semimetallic TetragonalHf2O3andZr2O3from First Principles

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector–Matrix Multiplication;ACS Applied Electronic Materials;2024-05-30

2. Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge;Nature Communications;2024-04-25

3. High‐Performance GdNiO₃ Epitaxial Film Memristor for Neuralactivity Analysis;Advanced Functional Materials;2024-02-26

4. HfO₂ Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors;IEEE Journal of the Electron Devices Society;2024

5. Ag-dispersive chalcogenide media for readily activated electronic memristor;Applied Surface Science;2024-01