HfO₂ Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors-Reference-Cited by-同舟云学术

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HfO₂ Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors

Published:2024 Issue: Volume:12 Page:508-515
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Lupo Federico Vittorio¹^ORCID,Mosca Mauro¹^ORCID,Bagdzevicius Sarunas²^ORCID,Rani Rashmi²,Maudez William²^ORCID,Wagner Estelle²^ORCID,Casaletto Maria Pia³^ORCID,Basile Salvatore¹^ORCID,Benvenuti Giacomo⁴,Crupi Isodiana¹^ORCID,Macaluso Roberto¹^ORCID

Affiliation:

1. Thin Films Laboratory, Dipartimento di Ingegneria, Università degli Studi di Palermo, Palermo, Italy

2. 3D-Oxides SAS, Saint-Genis-Poully, France

3. Institute of Nanostructured Materials, National Research Council, Palermo, Italy

4. ABCD Technology Sarl, Nyon, Switzerland

Funder

University of Palermo within the “Premio Gruppi di Ricerca 2021” of the Department of Engineering

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10563993.pdf?arnumber=10563993

Reference63 articles.

1. Metal–Oxide RRAM

2. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

3. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

4. Challenges and Applications of Emerging Nonvolatile Memory Devices

5. Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

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