Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure-Reference-Cited by-同舟云学术

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Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

Published:2018-03 Issue: Volume:434 Page:822-830
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sokolov Andrey Sergeevich,Jeon Yu-Rim,Kim Sohyeon,Ku Boncheol,Lim Donghwan,Han Hoonhee,Chae Myeong Gyoon,Lee Jaeho,Ha Beom Gil,Choi Changhwan

Funder

Nano Material Technology Development Program

Ministry of science, ICT & Future Planning

Future Semiconductor Device Technology Development Program

MOTIE (Ministry of Trade, Industry & Energy

KSRC (Korea Semiconductor Research Consortium

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference50 articles.

1. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. Resistive switching phenomena: a review of statistical physics approaches;Lee;Appl. Phys. Rev.,2015

3. Atomic switch: atom/ion movement controlled devices for beyond Von‐Neumann computers;Hasegawa;Adv. Mater.,2012

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory;Kwon;Nat. Nanotechnol.,2010

5. Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory;Prakash;Nanosc. Res. Lett.,2013

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