Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
Author:
Affiliation:
1. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695–7907 USA
2. NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
3. NaMLab gGmbH/TU Dresden Noethnitzer Str. 64 Dresden D‐01187 Germany
Funder
National Science Foundation
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201600173
Reference51 articles.
1. Ferroelectricity in hafnium oxide thin films
2. The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
3. Stabilizing the ferroelectric phase in doped hafnium oxide
4. Ferroelectricity in Gd-Doped HfO2Thin Films
5. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
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