Multi‐State Heterojunction Transistors Based on Field‐Effect Tunneling–Transport Transitions-Reference-Cited by-同舟云学术

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Multi‐State Heterojunction Transistors Based on Field‐Effect Tunneling–Transport Transitions

Published:2021-06 Issue:29 Volume:33 Page:2101243
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lim Dong Un¹,Jo Sae Byeok¹²^ORCID,Kang Joohoon³,Cho Jeong Ho¹^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of Korea

2. Nano Science and Technology Research Institute Yonsei University Seoul 03722 Republic of Korea

3. School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202101243

Reference27 articles.

1. The chips are down for Moore’s law

2. The drive to miniaturization

3. Tunnelling-based ternary metal–oxide–semiconductor technology

4. The Prospects for Multivalued Logic: A Technology and Applications View

5. Multiple-Valued Logic—its Status and its Future

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