Affiliation:
1. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon Gyeonggi‐do 16419 Republic of Korea
2. Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering University of Waterloo Waterloo Ontario N2L 3G1 Canada
3. School of Materials Science & Engineering Kookmin University Seoul 02707 Republic of Korea
Abstract
AbstractThe unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near‐infrared, and ease of large‐scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting‐edge techniques and future directions for optoelectronic devices based on multilayer TMDs.
Funder
Natural Sciences and Engineering Research Council of Canada
National Research Foundation of Korea
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Cited by
5 articles.
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