In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor-Reference-Cited by-同舟云学术

In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

Published:2023-01-06 Issue:5 Volume:17 Page:4296-4305
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bala Arindam¹,So Byungjun¹,Pujar Pavan¹^ORCID,Moon Changgyun¹,Kim Sunkook¹^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon16419, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c08615

Reference38 articles.

1. In-memory computing with resistive switching devices

2. Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

3. Self-selective van der Waals heterostructures for large scale memory array

4. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

5. Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in a Thin Film of Poly(N-vinylcarbazole) with Covalently Bonded C60

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